Multiplexer

ABSTRACT

A multiplexer circuit includes first and second fins each extending in an X-axis direction. First, second, third and fourth gates extend in a Y-axis direction perpendicular to the X-axis direction and contact the first and second fins. The first, second, third and fourth gates are configured to receive first, second, third and fourth data signals, respectively. Fifth, sixth, seventh and eighth gates extend in the Y-axis direction and contact the first and second fins, the fifth, sixth, seventh and eighth gates, and are configured to receive the first, second, third and fourth select signals, respectively. An input logic circuit is configured to provide an output at an intermediate node. A ninth gate extends in the Y-axis direction and contacts the first and second fins. An output logic circuit is configured to provide a selected one of the first, second, third and fourth data signals at an output terminal.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 17/853,095. Filed Jun. 29, 2022, which is a continuation ofU.S. patent application Ser. No. 16/883,524, filed on May 26, 2020, nowU.S. Pat. No. 11,392,743, which claims benefit of U.S. ProvisionalPatent Application No. 62/861,649, filed Jun. 14, 2019, the disclosuresof which are hereby incorporated by reference in their entirety.

BACKGROUND

Integrated circuits can include many standard cells with differentfunctions. For example, standard cells can be logic gates, such as anAND gate, an OR gate, an XOR gate, a NOT gate, a NAND gate, a NOR gate,and an XNOR gate, and combinational logic circuits such as amultiplexer, a flip-flop, an adder, and a counter. Standard cells can beimplemented to realize complex integrated circuit functions. Whendesigning an integrated circuit having specific functions, standardcells are selected. Next, designers, or EDA (Electronic DesignAutomation) or ECAD (Electronic Computer-Aided Design) tools draw outdesign layouts of the integrated circuit including the selected standardcells and/or non-standard cells. The design layouts are converted tophotomasks. Then, semiconductor integrated circuits can be manufactured,when patterns of various layers, defined by photography processes withthe photomasks, are transferred to a substrate.

For convenience of integrated circuit design, a library includingfrequently used standard cells with their corresponding layouts areestablished. Therefore, when designing an integrated circuit, a designercan select desired standard cells from the library and places theselected standard cells in an automatic placement and routing block,such that a layout of the integrated circuit can be created.

For example, such standard cell libraries may include digitalmultiplexors (DMUX). DMUXs are used in a variety of applications. Amultiplexer is a device that selects among several data input signalsand provides a single output of a selected one or more of the inputsbased on a select signal. A demultiplexer receives a single multiplexedinput and splits the input into a plurality of output signals. Exampleapplications utilizing a DMUX include memory devices andmicrocontrollers.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a block diagram illustrating an example of a processing systemin accordance with some embodiments.

FIG. 2 is a flow diagram illustrating an integrated circuit design andfabrication process in accordance with some embodiments.

FIG. 3 is a truth table for a four input multiplexer in accordance withsome

embodiments.

FIG. 4 is a block diagram illustrating a cross-section of an examplesemiconductor structure in accordance with some embodiments.

FIG. 5A is a logic diagram and FIG. 5B is a circuit diagram illustratingan example digital multiplexer (DMUX) in accordance with someembodiments.

FIG. 6 is a layout diagram illustrating an example standard cell layoutfor the DMUX shown in FIG. 5B in accordance with some embodiments.

FIG. 7A is a logic diagram and FIG. 7B is a circuit diagram illustratinganother example DMUX in accordance with some embodiments.

FIG. 8 is a layout diagram illustrating an example standard cell layoutfor the DMUX shown in FIG. 7B in accordance with some embodiments.

FIG. 9A is a logic diagram and FIG. 9B is a circuit diagram illustratinga further example DMUX in accordance with some embodiments.

FIG. 10 is a layout diagram illustrating an example standard cell layoutfor the DMUX shown in FIG. 9B in accordance with some embodiments.

FIG. 11A is a logic diagram and FIG. 11B is a circuit diagramillustrating yet another example DMUX in accordance with someembodiments.

FIG. 12 is a layout diagram illustrating an example standard cell layoutfor the DMUX shown in FIG. 11B in accordance with some embodiments.

FIG. 13A is a logic diagram and FIG. 13B is a circuit diagramillustrating another example DMUX in accordance with some embodiments.

FIGS. 14-17 are layout diagrams illustrating an example standard celllayouts for the DMUX shown in FIG. 13 in accordance with someembodiments.

FIG. 18 is a flow diagram illustrating an example of a method inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Electronic Design Automation (EDA) tools and methods facilitate thedesign, partition, and placement of microelectronic integrated circuitson a semiconductor substrate. This process typically includes turning abehavioral description of the circuit into a functional description,which is then decomposed into logic functions and mapped into cellsusing a standard cell library. Once mapped, a synthesis is performed toturn the structural design into a physical layout, a clock tree is builtto synchronize the structural elements, and the design is optimized postlayout.

FIG. 1 is a block diagram illustrating an example of a processing system10 in accordance with some embodiments disclosed herein. The processingsystem 10 may be used to implement an EDA system in accordance withvarious processes discussed herein. The processing system 10 includes aprocessing unit 11, such as a desktop computer, a workstation, a laptopcomputer, a dedicated unit customized for a particular application, asmart phone or tablet, etc. The processing system 10 may be equippedwith a display 14 and one or more input/output devices 12, such as amouse, a keyboard, touchscreen, printer, etc. The processing unit 11also includes a central processing unit (CPU) 20, memory 22, a massstorage device 24, a video adapter 26, and an I/O interface 28 connectedto a bus 30.

The bus 30 may be one or more of any type of several bus architecturesincluding a memory bus or memory controller, a peripheral bus, or videobus. The CPU 20 may comprise any type of electronic data processor, andthe memory 22 may comprise any type of system memory, such as staticrandom access memory (SRAM), dynamic random access memory (DRAM), orread-only memory (ROM).

The mass storage device 24 may comprise any type of storage deviceconfigured to store data, programs, and other information and to makethe data, programs, and other information accessible via the bus 30. Themass storage device 24 may comprise, for example, one or more of a harddisk drive, a magnetic disk drive, an optical disk drive, flash memory,or the like.

The term computer readable media as used herein may include computerstorage media such as the system memory and storage devices mentionedabove. Computer storage media may include volatile and nonvolatile,removable and non-removable media implemented in any method ortechnology for storage of information, such as computer readableinstructions, data structures, or program modules. The memory 22 andmass storage device 24 are computer storage media examples (e.g., memorystorage). The mass storage device may further store a library ofstandard cells, such as standard cells disclosed herein.

Computer storage media may include RAM, ROM, electrically erasableread-only memory (EEPROM), flash memory or other memory technology,CD-ROM, digital versatile disks (DVD) or other optical storage, magneticcassettes, magnetic tape, magnetic disk storage or other magneticstorage devices, or any other article of manufacture which can be usedto store information and which can be accessed by the processing system10. Any such computer storage media may be part of the processing system10. Computer storage media does not include a carrier wave or otherpropagated or modulated data signal.

Communication media may be embodied by computer readable instructions,data structures, program modules, or other data in a modulated datasignal, such as a carrier wave or other transport mechanism, andincludes any information delivery media. The term “modulated datasignal” may describe a signal that has one or more characteristics setor changed in such a manner as to encode information in the signal. Byway of example, and not limitation, communication media may includewired media such as a wired network or direct-wired connection, andwireless media such as acoustic, radio frequency (RF), infrared, andother wireless media.

The video adapter 26 and the I/O interface 28 provide interfaces tocouple external input and output devices to the processing unit 11. Asillustrated in FIG. 1 , examples of input and output devices include thedisplay 14 coupled to the video adapter 26 and the I/O device 12, suchas a mouse, keyboard, printer, and the like, coupled to the I/Ointerface 28. Other devices may be coupled to the processing unit 11,and additional or fewer interface cards may be utilized. For example, aserial interface card (not shown) may be used to provide a serialinterface for a printer. The processing unit 11 also may include anetwork interface 32 that may be a wired link to a local area network(LAN) or a wide area network (WAN) 16 and/or a wireless link.

Embodiments of the processing system 10 may include other components.For example, the processing system 10 may include power supplies,cables, a motherboard, removable storage media, cases, and the like.These other components, although not shown, are considered part of theprocessing system 10.

In some examples, software code is executed by the CPU 20 to analyze auser design to create a physical integrated circuit layout. The softwarecode may be accessed by the CPU 20 via the bus 30 from the memory 22,mass storage device 24, or the like, or remotely through the networkinterface 32. Further, in some examples, the physical integrated circuitlayout is created based on a functional integrated circuit design, whichmay be received though the I/O interface 28 and/or stored in the memory22 or the mass storage device 24 in accordance with various methods andprocesses implemented by the software code.

A standard cell can include an entire device, such as a transistor,diode, capacitor, resistor, or inductor, or can include a group ofseveral devices arranged to achieve some particular function, such as aninverter, a flip-flop, a memory cell, or multiplexer, among others. Inaddition to making functional design easier to conceptualize, the use ofstandard cells can reduce verification time for design rule checking(DRC) of the layout features within the IC, because a standard cell thatis repeated throughout the layout can be checked a single time in DRCrather than each instantiation being checked individually. Based on thereceived functional circuit description, the processing system 10 isconfigured to select standard cells from the cell library.

FIG. 2 generally illustrates an example integrated circuit design andfabrication process 40 that may be implemented by the processing system10 for generating a physical layout from a user suppliedbehavioral/functional design. The user design 42 specifies the desiredbehavior or function of the circuit based upon various signals orstimuli applied to the inputs of the overall design, and may be writtenin a suitable programming language. The design 42 may be uploaded intothe processing unit 11 (see FIG. 1 ) through the I/O interface 28 by auser. Alternatively, the design 42 may be uploaded and/or saved on thememory 22 or mass storage device 24, or the design 42 may be uploadedthrough the network interface 32 from a remote user.

A synthesis 44 is performed on the design, in which the behavior and/orfunctions desired from the design 42 are transformed to a functionallyequivalent logic gate -level circuit description by matching the designto standard cells, such as from one or more cell libraries 48. The celllibrary 48 contains a listing of pre-designed components, or functionalcells, each of which may perform a predetermined function. The cells arestored in the cell library 48 as information comprising internal circuitelements, the various connections to these circuit elements, apre-designed physical layout pattern, dopant implants, wells, etc.Additionally, the stored cell may also comprise a shape of the cell,terminal positions for external connections, delay characteristics,power consumption, etc. The synthesis 44 results in a functionallyequivalent logic gate-level circuit description, such as a gate-levelnetlist 46. The cell library 48 may be stored, for example, in one ormore databases contained in the mass storage device 24. Based on thegate-level netlist 46, a photolithographic mask 50 may be generated,which is used to fabricate the integrated circuit 52.

A digital multiplexer (sometimes referred to herein as a DMUX) is adevice that selects among several data input signals and provides asingle output of a selected one or more of the inputs based on a selectsignal. A de-multiplexer receives a single multiplexed input and splitsthe input into a plurality of output signals. Thus, for example, a DMUX4refers to a digital multiplexer that receives four data input signals(I0-I3) and select signals (S0-S3) and outputs a single signal (Z) basedon the data and select input signals. FIG. 3 illustrates an exampletruth table for a DMUX4, showing the data input signals I0-I3, selectsignals S0-S3 and outputs signal Z.

Example applications utilizing a DMUX include integrated circuitdevices, memory devices and microcontrollers. Standard cells, such asstandard cells stored in the cell library 48 shown in FIG. 2 may includevarious DMUX circuits, and such DMUX cells are often a very highly usedfor certain integrated circuit devices.

Aspects of this disclosure relate to DMUX circuits and layoutembodiments for reducing area-cost and improving overall performance forsystems utilizing DMUX circuits. In some examples, embodiments employDMUX design innovations to reduce transistor counts. In some disclosedexamples, combinational logic and layout structures may reduce the areautilized by the DMUX circuit reduced nearly 8%. Additionally, powerconsumption and speed may be improved. For instance, disclosedembodiments provide DMUX circuits using various combinations of logiccircuits implemented without transmission gates, which are typicallyused in known DMUX circuits.

Some disclosed DMUX cells include logic circuits with transistors formedusing a fin field effect transistor (FinFET) architecture. For example,a polysilicon or other conductive structure can be connected to asemiconductor fin that extends above an isolation material. Thepolysilicon structure functions as the gate of the FinFET transistorsuch that a voltage applied to the polysilicon structure determines theflow of electrons between source/drain (S/D) contacts connected to thefin on opposite sides of the polysilicon structure. A threshold voltageof the FinFET transistor is the minimum voltage such that the transistoris considered to be turned “on” such that an appreciable current canflow between the S/D contacts. The number of polysilicon structures incontact with a fin along its length that are used in forming a DMUX cellcan be considered to be the “pitch,” often termed the “contacted polypitch” or Cpp, of the cell along one dimension and is at least partiallydeterminative of the density of the cell.

FIG. 4 is a block diagram illustrating a cross-section of an examplesemiconductor structure which may be used for implementing DMUX devicesdisclosed herein. The structure 60 is shown in the X-axis and Z-axisdirections while the Y-axis direction is orthogonal to the plane of thecross-section illustrated in FIG. 4 . The structure 60 includes a baselayer 62 and an interconnect layer 64.

Generally, the base layer 62 includes a semiconductor substrate that, inturn, includes polysilicon regions (e.g. also termed “poly” throughoutthis disclosure), diffusion regions, semiconductor wells (e.g., N-wells,P-wells, deep N-wells, deep P-wells), etc., wherein semiconductordevices (e.g., transistors, diodes, etc.) are formed. An interconnectlayer 64 includes N (e.g., an integer number of) conductive layers(e.g., metal layers M1 to MN) used for interconnecting devices withinlayers in interconnect layer 64 and for forming electrical connectionsto external devices, etc. The interconnect layer 64 generally includesvias, inter-level dielectric materials, passivation layers, bondingpads, packaging resources, etc. Each metal (e.g., conductive) layer M inthe interconnect layer 64 is commonly called metal one, metal two, metalthree (M1, M2, M3, etc) layers, etc. Between the various metal layers Mare dielectric materials (e.g., high-K, low-K material, etc.) 66 used toinsulate the metal layers M. The base layer 62 and interconnect layer 64are often called a front-end structure and a backend structure,respectively, because they are the respective “front end of line” (FEOL)and “back end of line” (BEOL) in the semiconductor fabrication process.In some embodiments, DMUX devices are built using the base layer 62 andone or more of the metal layers M.

FIGS. 5A and 5B illustrate a DMUX4 circuit 100, and FIG. 6 illustratesan example standard cell layout diagram for the DMUX4 circuit 100 inaccordance with some embodiments. The DMUX4 circuit 100 includes aneight-input AND-OR (AO2222) logic circuit 102 and an inverter 104 thattogether are implemented by 18 transistors. In general, the AO2222circuit 102 is configured to receive the data signals I0-I3 and thesignals S0-S3 and is thus referred to herein as a multiplexer inputlogic circuit. The AO2222 circuit 102 is further configured to output aninverse of the selected one of the data signals I0-I3 in response to theselect signals S0-S3. The inverter circuit 104 is configured to receivethe output of the AO2222 circuit 102 and provide the output signal Zbased on the selected data signal, and is thus referred to herein as amultiplexer output logic circuit.

More particularly, AO2222 circuit 102 includes four 2-input AND gates102 a-102 d that respectively receive the I0/S0-I3/S3 inputs. Theoutputs of the AND gates 102 a-102 d are received by a NOR gate 102 e.An inverter 104 receives the output of the NOR gate 102 e to provide theoutput signal Z. FIG. 5B illustrates one example of the DMUX circuit100, where the AO2222 circuit 102 includes PMOS transistors 110, 111,112, and 113 that each have gate terminals coupled to receive the I0,I1, I2, and I3 inputs, respectively. PMOS transistors 120, 121, 122, and123 each have gate terminals coupled to receive the S0, S1, S2, and S3inputs, respectively. The PMOS transistors 110-113 are connected inseries between a VDD power rail and an intermediate node 126, as are thePMOS transistors 120-123. More particularly, the transistors 113 and 123have source terminals coupled to the VDD rail, and drain terminalsconnected to source terminals of the adjacent transistors 112 and 122,respectively. Similarly, the transistors 112 and 122 have drainterminals connected to respective source terminals of the transistors111 and 121, which have drain terminals connected to respective sourceterminals of the transistors 110 and 120, which further have drainterminals coupled to the intermediate node 126. Still further, the drainterminals of the transistors 111, 112 and 113 are connected to therespective drain terminals of the transistors 121, 122 and 123.

The AO2222 circuit 102 further includes NMOS transistors 130, 131, 132,and 133 that each have gate terminals coupled to receive the I0, I1, I2,and I3 inputs, respectively. NMOS transistors 140, 141, 142, and 143each have gate terminals coupled to receive the S0, S1, S2, and S3inputs, respectively. The NMOS transistors 130-133 each have drainterminals coupled to the intermediate node 126 and source terminalscoupled to drain terminals of the NMOS transistors 140-143,respectively. Source terminals of each of the NMOS transistors 140-143are connected to a VSS power rail.

The intermediate node 126 is connected to an input of the inverter 104,which includes a PMOS transistor 152 and NMOS transistor 154 connectedbetween the VDD and VSS rails. The inverter 104 provides the outputsignal Z of the DMUX4 100.

Thus, if any of the select signals S0-S1 AND its corresponding datasignal I0-I3 are high, the associated PMOS transistor pair(s) isdeactivated and the intermediate node 126 is cut off from the VDD rail.Further, the associated NMOS transistor pair(s) is activated to connectthe intermediate node 126 to the VSS rail, pulling the intermediate node126 low. The low signal at the intermediate node 126 is inverted to highby the inverter 104.

The example layout diagram shown in FIG. 6 includes first and secondfins 160, 162 extending in the X-axis direction. Metal lines 166, whichmay be in one or more metal layers, e.g. M1 extend between the VDD andVSS rails and the fins 160 and 162 to connect the source or drainterminals of the transistors to the VDD or VSS rails as shown in FIG.5B. For transistors where source or drain terminals are not connected tothe VDD or VSS terminals, the metal lines 166 may be cut or disconnectedfrom the VDD or VSS rails. For instance, metal lines 166 connect thesource terminals of the transistors 113 and 123 to the VDD rail, and thesource terminals of the transistors 140-143 to the VSS rail. Metal cuts168 separate the source terminals of the transistors 110-112 and 120-122from the VDD rail, and the source terminals of the transistors 131-133from the VSS rail.

Active gate structures 170 extend in the Y-axis direction and areconnected to corresponding data signals I0-I3 and select signals S0-S3.In the illustrated example, the gate structures may include activepolysilicon structures (“poly gates”). It should be understood that inthe present disclosure, the X-axis and Y-axis are shown and described asbeing transverse or substantially perpendicular to one another. However,the X-axis and Y-axis may not actually be perfectly perpendicular toeach other due to design, manufacturing, measurement errors/marginscaused by unperfected manufacturing and measurement conditions. Such adescription should be recognizable to one of ordinary skill in the art.

Each of the poly gates 170 contacts both the first and second fins 160,162. Further, as shown in FIG. 6 , each of the poly gates 170 receives acorresponding one of the data signals I0-I3 or one of the select signalsS0-S3. In other words, each poly gate 170 receives one input signal.Accordingly, in the embodiment illustrated in FIG. 6 , there are eightpoly gates 170 to receive the four data signals I0-I3 and the fourselect signals S0-S3. Further, a ninth gate or poly gate 171 extends inthe Y-axis direction and contacts the first and second fins 160 and 162.The ninth poly gate 171 is connected to the intermediate node 126 andforms the transistors 152 and 154 of the inverter 104.

In the embodiment shown, the fins 160 and 162 have a longer dimension(e.g. a length) along the X-axis direction as shown in FIG. 6 , and areseparated from each other in the Y-axis direction. The poly gates 170and the metal lines 166 have a longer dimension (e.g. a length) alongthe Y-axis direction and are separated from each other in the X-axisdirection.

Via contacts 172 interconnect various terminals of the illustratedtransistors as shown in FIG. 5B through additional metal contacts (notshown in FIG. 6 ) that are disposed in other metal layers M1-MN of thedevice. In order to avoid leakage between neighboring devices (cells),the standard cell includes the inactive gate structures formed on edgesof the active regions, e.g. the fins 160, 162. Such inactive, or “dummy”polysilicon gate structures 174 also extend in the Y-axis direction, andfunction to separate cells from one another, and also to separateportions of one cell from another. In some examples, the inactive polystructures are referred to as continuous poly on oxide definition edge(CPODE) patterns. That is, the inactive polysilicon structures are notelectrically connected as gates for MOS devices but are instead “dummy”structures, having no function in the circuit. The inactive polystructures further cover and protect the ends of the fins in the cellsduring processing, providing additional reliability during processing.

FIGS. 7A and 7B illustrate a DMUX4 circuit 200, and FIG. 8 illustratesan example standard cell layout diagram for the DMUX4 circuit 200 inaccordance with some embodiments. The DMUX4 circuit 200 utilizes six-input AND-OR-INVERT (AOI222) logic with two-input NAND (ND2) logic thatare implemented with 20 transistors in the illustrated example. Ingeneral, the DMUX4 circuit 200 includes an input logic circuit that hasa first ND2 circuit 202 and an AOI222 circuit 204. The first ND2 circuit202 is configured to receive the data signal I0 and the select signal S0and to provide an output at a first intermediate node 226. The AOI222circuit 204 includes three AND gates 204 a-204 c configured torespectively receive the data signals I1-I3 and respectively receive theselect signals S1-S3. The outputs of the AND gates 204 a-204 c arereceived by a NOR gate 204 d, which is configured to provide an outputat a second intermediate node 228. An output logic circuit includes asecond ND2 circuit 206 that has inputs connected to the first and secondintermediate nodes to receive the outputs of the first ND2 circuit 202and the AOI222 circuit 204, and provide the selected data signal Z.

More particularly, as shown in FIG. 7B the first ND2 circuit 202includes a PMOS transistor 210 that has a gate terminal coupled toreceive the I0 data signal. A PMOS transistor 220 has a gate terminalcoupled to receive the S0 select signal. The PMOS transistor 210 and thePMOS transistor 220 are both have source terminals coupled to the VDDrail, and drain terminals connected the intermediate node 226. NMOStransistors 230 and 240 have gate terminals coupled to receive the I0and S0 inputs, respectively. The NMOS transistor 230 has a drainterminal coupled to the intermediate node 226 and a source terminalcoupled to a drain terminals of the NMOS transistor 240. A sourceterminal of the NMOS transistors 240 is connected to the VSS power rail.

The AOI222 circuit 204 includes PMOS transistors 211, 212, and 213 thateach have gate terminals coupled to receive the I1, I2, and I3 inputs,respectively. PMOS transistors 221, 222, and 223 each have gateterminals coupled to receive the S1, S2, and S3 inputs, respectively.The PMOS transistors 211-213 are connected in series between the VDDpower rail and a second intermediate node 228, as are the PMOStransistors 221-223. More particularly, the transistors 213 and 223 havesource terminals coupled to the VDD rail, and drain terminals connectedto source terminals of the adjacent transistors 212 and 222,respectively. Similarly, the transistors 212 and 222 have drainterminals connected to respective source terminals of the transistors211 and 221, which have drain terminals coupled to the secondintermediate node 228. Still further, the drain terminals of thetransistors 211, 212 and 213 are connected to the respective drainterminals of the transistors 221, 222 and 223.

The AOI222 circuit 204 further includes NMOS transistors 231, 232, and233 that each have gate terminals coupled to receive the I1, I2, and I3inputs, respectively. NMOS transistors 241, 242, and 243 each have gateterminals coupled to receive the S1, S2, and S3 inputs, respectively.The PMOS transistors 211-213 each have drain terminals coupled to thesecond intermediate node 228 and source terminals coupled to drainterminals of the NMOS transistors 241-243, respectively. Sourceterminals of each of the NMOS transistors 241-243 are connected to theVSS power rail.

The second ND2 circuit 206 includes a PMOS transistor 252 that has agate terminal coupled to the first intermediate node 226, and PMOStransistor 254 has a gate terminal coupled to the second intermediatenode 228. The PMOS transistor 254 and the NMOS transistor 256 both havesource terminals coupled to the VDD rail, and drain terminals connectedto an output terminal 259 that provides the output signal Z. NMOStransistors 256 and 258 have gate terminals coupled to the first andsecond intermediate nodes, respectively. The NMOS transistor 256 has adrain terminal coupled to the output terminal 259 and a source terminalcoupled to a drain terminals of the NMOS transistor 258. A sourceterminal of the NMOS transistor 258 is connected to the VSS power rail.

FIG. 8 illustrates an example standard cell layout for the DMUX4 circuit200 that includes first and second fins 260, 262 extending in the X-axisdirection. Metal lines 266, which may be in one or more metal layers,e.g. M1 extend between the VDD and VDD rails and the fins 260 and 262 toconnect the source or drain terminals of the transistors to the VDD orVSS rails as shown in FIG. 7B. For transistors where source or drainterminals are not connected to the VDD or VSS terminals, the metal lines266 may be cut or disconnected from the VDD or VSS rails. For instance,metal lines 266 connect the source terminals of the transistors 210,213, 220, 223, 252 and 254 to the VDD rail, and the source terminals ofthe transistors 240-243 and 258 to the VSS rail. Metal cuts 268 separatethe source terminals of the transistors 211, 212, 221 and 222 from theVDD rail, and the source terminals of the transistors 230-233 and 256from the VSS rail.

Gates, such as poly gates 270 extend in the Y-axis direction and areconnected to corresponding data signals I0-I3 and select signals S0-S3.Each of the poly gates 270 contacts both the first and second fins 260,262. In the embodiment illustrated in FIG. 8 , eight of the poly gates270 to receive the four data signals I0-I3 and the four select signalsS0-S3. Additional poly gates 271 a and 271 b are connected to the fins260 and 262 to form the transistors of the second ND2 circuit 206.

Via contacts 272 interconnect various terminals of the illustratedtransistors as shown in FIG. 7B through additional metal contacts thatare disposed in other metal layers M1-MN of the device. Inactivepolysilicon structures are formed on edges the fins 260, 262 to separatecells from one another. Additional polysilicon structures 274 separateportions of one cell from another, such as the second ND2 circuit 206from the first ND2 circuit 202.

FIGS. 9A and 9B illustrate another embodiment of a DMUX4 circuit 300,and FIG. 10 illustrates an example standard cell layout for the DMUX4circuit 300. The DMUX4 circuit 300 includes an input logic circuit witha first ND2 circuit 302 configured to receive the data signal I0 and theselect signal S0, and provide an output at a first intermediate node326. A second ND2 circuit 304 is configured to receive the data signalI1 and the select signal S1 and provide an output at a secondintermediate node 328. A 4-input AND-OR-INVERT (AOI22) circuit 306includes AND gates 306 a and 306 b configured to respectively receivethe data signals I2 and I3 and to respectively receive the selectsignals S2 and S3. A NOR gate 306 c receives the outputs of the ANDgates 306 a and 306 b, and provides an output at a third intermediatenode 329. A logic output circuit has a 3-input NAND (ND3) circuit 308with inputs connected to the first, second and third intermediate nodes326, 328 and 329 and is configured to output the selected one of thefirst, second, third and fourth data signals I0-I3.

More particularly, as shown in FIG. 9B the first ND2 circuit 302includes a PMOS transistor 310 that has a gate terminal coupled toreceive the I0 data signal. A PMOS transistor 320 has a gate terminalcoupled to receive the S0 select signal. The PMOS transistor 310 and thePMOS transistor 320 both have source terminals coupled to the VDD rail,and drain terminals connected to the first intermediate node 326. NMOStransistors 330 and 340 have gate terminals coupled to receive the I0and S0 inputs, respectively. The NMOS transistor 330 has a drainterminal coupled to the first intermediate node 326 and a sourceterminal coupled to a drain terminal of the NMOS transistor 340. Asource terminal of the NMOS transistor 340 is connected to the VSS powerrail.

The second ND2 circuit 304 includes a PMOS transistor 310 that has agate terminal coupled to receive the I1 data signal. A PMOS transistor321 has a gate terminal coupled to receive the S1 select signal. ThePMOS transistor 311 and the PMOS transistor 321 both have sourceterminals coupled to the VDD rail, and drain terminals connected to thesecond intermediate node 328. NMOS transistors 331 and 341 have gateterminals coupled to receive the I1 and S1 inputs, respectively. TheNMOS transistor 331 has a drain terminal coupled to the secondintermediate node 328 and a source terminal coupled to a drain terminalof the NMOS transistor 341. A source terminal of the NMOS transistor 341is connected to the VSS power rail.

The AOI22 circuit 306 includes PMOS transistors 312, and 313 that eachhave gate terminals coupled to receive the 12, and 13 inputs,respectively. PMOS transistors 322, and 323 each have gate terminalscoupled to receive the S2, and S3 inputs, respectively. The PMOStransistors 312 and 313 are connected in series between the VDD powerrail and a third intermediate node 329, as are the PMOS transistors 322and 323. More particularly, the transistors 313 and 323 have sourceterminals coupled to the VDD rail, and drain terminals connected tosource terminals of the adjacent transistors 312 and 322, respectively,which have drain terminals coupled to the third intermediate node 329.Still further, the drain terminals of the transistors 312 and 313 areconnected to the respective drain terminals of the transistors 322 and323.

The AOI22 circuit 306 further includes NMOS transistors 332, and 333that each have gate terminals coupled to receive the I2 and I3 inputs,respectively. NMOS transistors 342 and 343 each have gate terminalscoupled to receive the S2 and S3 inputs, respectively. The PMOStransistors 312 and 313 each have drain terminals coupled to the thirdintermediate node 329 and source terminals coupled to drain terminals ofthe NMOS transistors 342 and 343, respectively. Source terminals of eachof the NMOS transistors 341 and 343 are connected to the VSS power rail.

The ND3 circuit 308 includes a PMOS transistor 352 that has a gateterminal coupled to the first intermediate node 326, a PMOS transistor353 has a gate terminal coupled to the second intermediate node 328, anda PMOS transistor 354 has a gate terminal coupled to the thirdintermediate node 329. The PMOS transistors 352, 353 and 354 each have asource terminal coupled to the VDD rail, and a drain terminal connectedto an output terminal 359 that provides the output signal Z. NMOStransistors 356, 357, and 358 have gate terminals coupled to the first,second and third intermediate nodes 326, 328 and 329, respectively. TheNMOS transistor 356 has a drain terminal coupled to the output terminal359 and a source terminal coupled to a drain terminal of the NMOStransistor 357. A source terminal of the NMOS transistor 357 is coupledto a drain terminal of the NMOS transistor 358, which has a sourceterminal connected to the VSS power rail.

FIG. 10 illustrates an example standard cell layout for the DMUX4circuit 300 that includes first and second fins 360, 362 extending inthe X-axis direction. Metal lines 366, which may be in one or more metallayers, e.g. M1 extend between the VDD and VSS rails and the fins 360and 362 to connect the source or drain terminals of the transistors tothe VDD or VSS rails as shown in FIG. 9B. For transistors where sourceor drain terminals are not connected to the VDD or VSS terminals, themetal lines 366 may be cut or disconnected from the VDD or VSS rails.For instance, metal lines 366 connect the source terminals of thetransistors 310, 311, 313, 320, 321, 323, and 352-354 to the VDD rail,and the source terminals of the transistors 340-343, and 358 to the VSSrail. Metal cuts 368 separate the source terminals of the transistorsnot connected to the VDD or VSS rails, such as transistors 312, 322,330, 331-333, 356 and 357 from the VSS rail.

Gates, such as poly gates 370 extend in the Y-axis direction and areconnected to corresponding data signals I0-I3 and select signals S0-S3.Each of the poly gates 370 contacts both the first and second fins 360,362. In the embodiment illustrated in FIG. 10 , eight of the poly gates370 to receive the four data signals I0-I3 and the four select signalsS0-S3. Additional poly gates 371 a, 371 b, 371 c are connected to thefins 360 and 362 to form the transistors of the ND3 circuit 308.

Via contacts 372 interconnect various terminals of the illustratedtransistors as shown in FIG. 10 through additional metal contacts thatmay be disposed in other metal layers M1-MN of the device. Inactivepolysilicon structures 374 are formed on edges the fins 360, 362 toseparate cells from one another. Additional inactive polysiliconstructures 374 separate portions of one cell from another, such as thesecond ND2 circuit 304 from the first ND2 circuit 302.

FIGS. 11A and 11B illustrate another embodiment of a DMUX4 circuit 400that includes 24 transistors forming ND2 circuits and a four-input NAND(ND4) circuit. As shown in FIGS. 11A and 11B, the DMUX4 circuit 400includes an input circuit with four ND2 gates 402, 404, 406 and 408. Thefirst ND2 circuit 402 is configured to receive the I0 data signal andthe S0 select signal, and to provide an output at a first intermediatenode 424. The second ND2 circuit 404 is configured to receive the I1data signal and the S1 select signal, and to provide an output at asecond intermediate node 426. The third ND2 circuit 406 is configured toreceive the I2 data signal and the S2 select signal, and to provide anoutput at a third intermediate node 428. The fourth ND2 circuit 408 isconfigured to receive the I3 data signal and the S3 select signal, andto provide an output at a fourth intermediate node 429. An output logiccircuit has an ND4 circuit 409 with input terminals connected to thefirst, second, third and fourth intermediate nodes 424, 426, 428, 429and configured to provide a selected one of the first, second, third andfourth data signal I0-I3.

More particularly, as shown in FIG. 11B the first ND2 circuit 402includes a PMOS transistor 410 that has a gate terminal coupled toreceive the I0 data signal. A PMOS transistor 420 has a gate terminalcoupled to receive the S0 select signal. The PMOS transistor 410 and thePMOS transistor 420 both have source terminals coupled to the VDD rail,and drain terminals connected to the first intermediate node 426. NMOStransistors 430 and 440 have gate terminals coupled to receive the I0and S0 inputs, respectively. The NMOS transistor 430 has a drainterminal coupled to the first intermediate node 424 and a sourceterminal coupled to a drain terminal of the NMOS transistor 440. Asource terminal of the NMOS transistor 440 is connected to the VSS powerrail.

The second ND2 circuit 404 includes a PMOS transistor 410 that has agate terminal coupled to receive the I1 data signal. A PMOS transistor421 has a gate terminal coupled to receive the S1 select signal. ThePMOS transistor 411 and the PMOS transistor 421 both have sourceterminals coupled to the VDD rail, and drain terminals connected to thesecond intermediate node 428. NMOS transistors 431 and 441 have gateterminals coupled to receive the I1 and S1 inputs, respectively. TheNMOS transistor 431 has a drain terminal coupled to the secondintermediate node 426 and a source terminal coupled to a drain terminalof the NMOS transistor 441. A source terminal of the NMOS transistor 441is connected to the VSS power rail.

The third ND2 circuit 406 includes a PMOS transistor 412 that has a gateterminal coupled to receive the I2 data signal. A PMOS transistor 422has a gate terminal coupled to receive the S2 select signal. The PMOStransistor 412 and the PMOS transistor 422 both have source terminalscoupled to the VDD rail, and drain terminals connected to the thirdintermediate node 428. NMOS transistors 432 and 442 have gate terminalscoupled to receive the I2 and S2 inputs, respectively. The NMOStransistor 432 has a drain terminal coupled to the third intermediatenode 428 and a source terminal coupled to a drain terminal of the NMOStransistor 442. A source terminal of the NMOS transistor 442 isconnected to the VSS power rail.

The fourth ND2 circuit 408 includes a PMOS transistor 413 that has agate terminal coupled to receive the I3 data signal. A PMOS transistor423 has a gate terminal coupled to receive the S3 select signal. ThePMOS transistor 413 and the PMOS transistor 423 both have sourceterminals coupled to the VDD rail, and drain terminals connected to thefourth intermediate node 429. NMOS transistors 433 and 443 have gateterminals coupled to receive the I3 and S3 inputs, respectively. TheNMOS transistor 433 has a drain terminal coupled to the fourthintermediate node 429 and a source terminal coupled to a drain terminalof the NMOS transistor 443. A source terminal of the NMOS transistor 443is connected to the VSS power rail.

The ND4 circuit 409 includes a PMOS transistor 450 that has a gateterminal coupled to the first intermediate node 424, a PMOS transistor451 with a gate terminal coupled to the second intermediate node 426, aPMOS transistor 452 with a gate terminal coupled to the thirdintermediate node 428, and a PMOS transistor 453 with a gate terminalcoupled to the fourth intermediate node 429. The PMOS transistors 450,451, 452 and 453 each have a source terminal coupled to the VDD rail,and a drain terminal connected to the output terminal 459 that providesthe output signal Z. NMOS transistors 454, 455, 456 and 457 have gateterminals coupled to the first, second, third and fourth intermediatenodes 424, 426, 428 and 429, respectively. The NMOS transistor 454 has adrain terminal coupled to the output terminal 459 and a source terminalcoupled to a drain terminal of the NMOS transistor 455. A sourceterminal of the NMOS transistor 456 is coupled to a drain terminal ofthe NMOS transistor 457, which has a source terminal connected to theVSS power rail.

FIG. 11 illustrates an example standard cell layout for the DMUX4circuit 400 that includes first and second fins 460, 462 extending inthe X-axis direction. Metal lines 466, which may be in one or more metallayers, e.g. M1 extend between the VDD and VDD rails and the fins 460and 462 to connect the source or drain terminals of the transistors tothe VDD or VSS rails as shown in FIG. 11 . For transistors where sourceor drain terminals are not connected to the VDD or VSS terminals, themetal lines 466 may be cut or disconnected from the VDD or VSS rails.For instance, metal lines 466 connect the source terminals of thetransistors 410-413, 420-423, and 450-453 to the VDD rail, and thesource terminals of the transistors 440-443, and 462 to the VSS rail.Metal cuts 468 separate the source terminals of the transistors notconnected to the VDD or VSS rails, such as transistors 430-433, and454-456 from the VSS rail.

Gates, such as poly gates 470 extend in the Y-axis direction and areconnected to corresponding data signals I0-I3 and select signals S0-S3.Each of the poly gates 470 contacts both the first and second fins 460,462. In the embodiment illustrated in FIG. 8 , eight of the poly gates470 to receive the four data signals I0-I3 and the four select signalsS0-S3. Additional poly gates 471 a, 471 b, 471 c, 471 d are connected tothe fins 460 and 462 to form the transistors of the ND4 circuit 409.

Via contacts 472 interconnect various terminals of the illustratedtransistors as shown in FIG. 12 through additional metal contacts thatmay be disposed in other metal layers M1-MN of the device. Inactivepolysilicon structures are formed on edges the fins 460, 462 to separatecells from one another. Additional polysilicon structures 474 separateportions of one cell from another, such as the second ND2 circuit 404from the first ND2 circuit 402.

FIGS. 13A and 13B illustrate a further example DMUX4 circuit 500 thatincludes 20 transistors forming AOI22 logic circuits and an ND2 circuit.An input logic circuit has first and second AOI22 circuits 502 and 504.The first AOI22 circuit 502 includes AND gates 502 a and 502 bconfigured to respectively receive the I0 and I1 data signals and torespectively receive the S0 and S1 select signals. A NOR gate 502 c isconfigured to receive the outputs of the AND gates 502 a and 502 b, andto provide an output at a first intermediate node 524. The second AOI22circuit 504 includes AND gates 504 a and 504 b configured torespectively receive the 12 and 13 data signals and to respectivelyreceive the S2 and S3 select signals. A NOR gate 504 c is configured toreceive the outputs of the AND gates 504 a and 504 b, and to provide anoutput at a second intermediate node 526. An output logic circuitincludes an ND2 circuit 506 that has inputs connected to the first andsecond intermediate nodes 524 and 526 and is configured to provide aselected one of the first, second, third and fourth data signals I0-I3.

More particularly, as shown in FIG. 13B the first AOI22 circuit 502includes a PMOS transistor 510 that has a gate terminal coupled toreceive the I0 data signal. A PMOS transistor 520 has a gate terminalcoupled to receive the S0 select signal. The PMOS transistor 510 and thePMOS transistor 520 both have source terminals coupled to the VDD rail,and drain terminals connected to the first intermediate node 524. NMOStransistors 530 and 540 have gate terminals coupled to receive the I0and S0 inputs, respectively. The NMOS transistor 530 has a drainterminal coupled to the first intermediate node 524 and a sourceterminal coupled to a drain terminal of the NMOS transistor 540. Asource terminal of the NMOS transistor 540 is connected to the VSS powerrail.

The first AOI22 circuit 502 includes a PMOS transistor 510 that has agate terminal coupled to receive the I1 data signal. A PMOS transistor521 has a gate terminal coupled to receive the S1 select signal. ThePMOS transistor 511 and the PMOS transistor 521 both have sourceterminals coupled to the VDD rail, and drain terminals connected to thesecond intermediate node 526. NMOS transistors 531 and 541 have gateterminals coupled to receive the I1 and S1 inputs, respectively. TheNMOS transistor 531 has a drain terminal coupled to the secondintermediate node 526 and a source terminal coupled to a drain terminalof the NMOS transistor 541. A source terminal of the NMOS transistor 541is connected to the VSS power rail.

The second AOI22 circuit 504 includes a PMOS transistor 512 that has agate terminal coupled to receive the I2 data signal. A PMOS transistor522 has a gate terminal coupled to receive the S2 select signal. ThePMOS transistor 512 and the PMOS transistor 522 both have sourceterminals coupled to the VDD rail, and drain terminals connected to thethird intermediate node 528. NMOS transistors 532 and 542 have gateterminals coupled to receive the I2 and S2 inputs, respectively. TheNMOS transistor 532 has a drain terminal coupled to the thirdintermediate node 528 and a source terminal coupled to a drain terminalof the NMOS transistor 542. A source terminal of the NMOS transistor 542is connected to the VSS power rail.

The second AOI22 circuit 504 includes a PMOS transistor 513 that has agate terminal coupled to receive the I3 data signal. A PMOS transistor523 has a gate terminal coupled to receive the S3 select signal. ThePMOS transistor 513 and the PMOS transistor 523 both have sourceterminals coupled to the VDD rail, and drain terminals connected to thefourth intermediate node 529. NMOS transistors 533 and 543 have gateterminals coupled to receive the I3 and S3 inputs, respectively. TheNMOS transistor 533 has a drain terminal coupled to the fourthintermediate node 529 and a source terminal coupled to a drain terminalof the NMOS transistor 543. A source terminal of the NMOS transistor 543is connected to the VSS power rail.

The ND2 circuit 506 includes a PMOS transistor 554 that has a gateterminal coupled to the first intermediate node 524, a PMOS transistor552 with a gate terminal coupled to the second intermediate node 526.The PMOS transistors 554 and 552 each have a source terminal coupled tothe VDD rail, and a drain terminal connected to the output terminal 559that provides the output signal Z. NMOS transistors 556 and 558 havegate terminals coupled to the first and second intermediate nodes 524and 526, respectively. The NMOS transistor 556 has a drain terminalcoupled to the output terminal 559 and a source terminal coupled to adrain terminal of the NMOS transistor 558. A source terminal of the NMOStransistor 556 is coupled to a drain terminal of the NMOS transistor558, which has a source terminal connected to the VSS power rail.

FIGS. 14-17 are layout diagrams illustrating various example standardcell layouts 500 a-500 d for the DMUX4 circuit 500. The embodimentsshown in FIGS. 14-16 each include first and second fins 560, 562extending in the X-axis direction. The example illustrated in FIG. 17includes four fins 560, 562, 563, 564. Metal lines 566, which may be inone or more metal layers, e.g. M1 extend between the VDD and VDD railsand the fins 560, 562, 563, 564 to connect the source or drain terminalsof the transistors to the VDD or VSS rails as shown in FIG. 13 . Fortransistors where source or drain terminals are not connected to the VDDor VSS terminals, the metal lines 566 may be cut or disconnected fromthe VDD or VSS rails. For instance, metal lines 566 connect the sourceterminals of the transistors 511, 513, 521, 523, 552 and 554 to the VDDrail(s), and the source terminals of the transistors 540, 541, 542, 543,and 558 to the VSS rail(s).

Gates, such as poly gates 570 extend in the Y-axis direction and areconnected to corresponding data signals I0-I3 and select signals S0-S3.In the examples shown in FIGS. 14-16 , active poly gates 570 form gatesof the various transistors shown in the DMUX4 circuit 500. Morespecifically, the embodiments shown in FIGS. 14-16 include eight polygates 570 a-570 h that are configured to connect to the data signalsI0-I3 and the select signals S0-S3. Referring now to the layout 500 ashown in FIG. 14 , the poly gates 570 a-570 d each extend in the Y-axisdirection and contact both fins 560, 562. Each of the poly gates 570a-570 d connects to a corresponding input signal, i.e., poly gate 570 aconnects to the I0 data signal, poly gate 570 b connects to the S0select signal, poly gate 570 c connects to the Il data signal, and polygate 570 d connects to the S1 select signal.

On the right side of the layout 500 a, the poly gates 570 f and 570 gare separated or cut by cut-poly patterns 571 between the first andsecond fins 560, 562 such that the poly gates 570 f and 570 g eachinclude separated upper and lower segments that contact the first andsecond fins 560 and 562, respectively. Further, the I3 and S2connections are split. For instance, rather than one continuous polygate providing the I3 signal to both the PMOS transistor 513 and theNMOS transistor 533, and another continuous poly gate providing the S2signal to both the PMOS transistor 512 and the NMOS transistor 542, thepoly gate 570 f is cut or separated by the cut poly 571. The uppersegment of the poly gate 570 f forms the gate of the PMOS transistor 513and receives the I3 data signal shown adjacent the fin 560 in FIG. 14 .Further, the lower segment of the poly gate 570 f forms the gate of theNMOS transistor 542 and receives the S3 data signal shown adjacent thefin 560.

Further active poly gates 570 i and 570 j extend in the Y-axis directionand form the gates of the transistors of the ND2 circuit 506. The polygate 570 j is immediately adjacent the poly gate 570 f. This arrangementplaces the sources of the PMOS transistor 513 (receiving the I3 datasignal) of the second AOI22 circuit 504 and the PMOS transistor 552 ofthe ND2 circuit 506 immediately adjacent one another such that theyabut. This allows the VDD connection to be “shared” by the sources ofthe PMOS transistor 513 and the PMOS transistor 552. By receiving the S2select signal on the same poly gate 570 f for the NMOS transistor 542,the source of the NMOS transistor 542 abuts the source of the NMOStransistor 558, allowing them to “share” the VSS connection thereto.This reduces area of the circuit and reduces one poly pitch. A dummygate 572 is situated between the poly gate 570 j and the poly gate 570b.

The example layout 500 b for the DMUX5 500 shown in FIG. 15 is similarto the layout 500 a shown in FIG. 14 , with the cut poly gates arrangedsuch that the VDD connection is shared by the sources of the PMOStransistor 513 and the PMOS transistor 552, and the VSS connection isshared by the sources of the NMOS transistor 542 and the NMOS transistor558. In FIG. 15 , the positions of the first data and select signals I0,S0 are swapped with the positions of the second data and select signalsI1, S1 from that shown in FIG. 14 . The abutting arrangement of thesources of the PMOS transistor 513 and the PMOS transistor 552, and theNMOS transistor 558 and the NMOS transistor 542 reduces area of thecircuit and reduces one poly pitch, since the poly gate 570 f isimmediately adjacent the poly gate 570 i. In other words, there is nodummy gate between the poly gate 570 f and poly gate 570 i.

In FIG. 16 , cut polys 571 are additionally provided for the poly gates570 b and 570 c such that these poly gates include upper and lowersegments contacting the first and second fins 560 and 562, respectively.The select signal S0 and the data signal I1 are swapped, such that thepoly gate 570 b receives the I1 input for the PMOS transistor 521 at itsupper segment, and receives the S0 select signal for the NMOS transistor540 at the lower segment of the poly gate 570 b. The poly gate 570 creceives the S0 select signal for the PMOS transistor 520 at its upperportion, and the I1 data signal for the NMOS transistor 531 at its lowerportion.

FIG. 17 illustrates an embodiment having four fins 560, 562, 563, 564.Poly gate 570 a-570 d are connected to receive the I0, S0, I1, S1signals for the PMOS transistors 510, 520, 511, 521 formed with the fin563, and the NMOS transistors 530, 540, 531, 541 formed with the fin564. Cut polys 571 are included in the upper portion of the poly gates570 c, 570 e, and the data signal I3 and the select signal S2 areswapped.

FIG. 18 is a flow diagram illustrating a method 600 for producing aDMUX4, such as the various embodiments disclosed herein. Referring toFIG. 18 along with the example layout diagram of FIG. 14 , at step 610 afirst fin 560 is formed on a substrate to extend in an X-axis direction.At step 612, a second fin 562 is formed on the substrate to extend inthe X-axis direction. A plurality of gates, such as the poly gates 570are formed at step 614 to extend in the Y-axis direction and contact thefirst and second fins to form a plurality of PMOS transistors and aplurality of NMOS transistors of a multiplexer input circuit. Asdiscussed above, the input circuit is configured to receive data andselect input signals. A further poly gate is formed at step 616 toextend in the Y-axis direction and contact the first and second fins toform a first PMOS transistor and a first NMOS transistor of amultiplexer output circuit configured to output an output signal basedon the received input and select input signals. The poly gate 570 i ispositioned immediately adjacent the poly gate 570 f. At step 618 a VDDterminal is formed to connected to the first fin at a first locationdefining a source of a first PMOS transistor of the multiplexer inputcircuit and defining a source of the first PMOS transistor of themultiplexer output circuit. At step 620, a VSS terminal is formed toconnect to the second fin at a second location defining a source of afirst NMOS transistor of the multiplexer input circuit and a source ofthe first NMOS transistor of the multiplexer output circuit.

As noted above, this arrangement places the sources of the PMOStransistor 513 shown in FIG. 14 (receiving the I3 data signal) and thePMOS transistor 552 of the output ND2 circuit 506 immediately adjacentone another such that they abut. This allows the VDD connection to be“shared” by the sources of the PMOS transistor 513 and the PMOStransistor 552. Further, the source of the NMOS transistor 542 abuts thesource of the NMOS transistor 558, allowing them to “share” the VSSconnection thereto. This reduces area of the circuit and reduces onepoly pitch. In some embodiments, a dummy gate is further situatedbetween the poly gate 570 j and the poly gate 570 b.

The various DMUX4 circuits and standard cell layouts disclosed hereineliminate transmission gates and instead use various combination oflogic cells, simplifying the design and sometimes reducing the totalnumber of transistors used to implement the logic circuits. Disclosedstandard cell layouts reduce cell area, eliminating one or more polypitches in some instances.

In accordance with some disclosed examples, a multiplexer circuit hasfirst and second fins each extending in an X-axis direction. First,second, third and fourth gates extend in a Y-axis directionperpendicular to the X-axis direction and contact the first and secondfins. The first, second, third and fourth gates are configured toreceive first, second, third and fourth data signals, respectively.Fifth, sixth, seventh and eighth gates extend in the Y-axis directionand contact the first and second fins. The fifth, sixth, seventh andeighth gates are configured to receive first, second, third and fourthselect signals, respectively. An input logic circuit includes the firstand second fins, and the first, second, third, fourth, fifth, sixth,seventh and eighth gates. The input logic circuit is configured toreceive the first, second, third and fourth data signals and the first,second, third and fourth select signals, and to provide an output at anintermediate node. A ninth gate extends in the Y-axis direction andcontacts the first and second fins. The ninth gate is connected to theintermediate node. An output logic circuit includes the first and secondfins and the ninth gate and is configured to provide a selected one ofthe first, second, third and fourth data signals at an output terminal.

Further aspects of the disclosure relate to a multiplexer configured toreceive first, second, third and fourth data signals and first, second,third and fourth select signals, and to output a selected one of thefirst, second, third and fourth data signals in response to the first,second, third and fourth select signals. The multiplexer includes firstand second fins each extending in an X-axis direction. A first AOI22circuit includes a first plurality of gates extending in a Y-axisdirection perpendicular to the X-axis direction. A second AOI22 circuitincludes a second plurality of gates extending in the Y-axis direction.An ND2 circuit includes a third plurality of gates extending in theY-axis direction. The third plurality of gates are configured to receivefirst and second outputs from the first and second AOI22 circuits,respectively. A VDD terminal is connected to the first fin at a locationdefining a source of a PMOS transistor of the ND2 circuit and a sourceof a PMOS transistor of the second AOI22 circuit. A VSS terminal isconnected to the second fin at a location defining a source of an NMOStransistor of the ND2 circuit and a source of an NMOS transistor of thesecond AOI22 circuit.

In accordance with other disclosed embodiments, a method includesforming a first fin on a substrate to extend in an X-axis direction. Asecond fin is formed on the substrate to extend in the X-axis direction.First, second, third, fourth, fifth, sixth, seventh and eighth gates areformed extending in a Y-axis direction perpendicular to the X-axisdirection and contacting the first and second fins to form a pluralityof PMOS transistors and a plurality of NMOS transistors of a multiplexerinput circuit. A ninth gate is formed extending in the Y-axis directionand contacting the first and second fins to form a first PMOS transistorand a first NMOS transistor of a multiplexer output circuit. The ninthgate is positioned immediately adjacent the eighth gate. A VDD terminalis formed connected to the first fin at a first location defining asource of a first PMOS transistor of the multiplexer input circuit anddefining a source of the first PMOS transistor of the multiplexer outputcircuit. A VSS terminal is formed connected to the second fin at asecond location defining a source of a first NMOS transistor of themultiplexer input circuit and a source of the first NMOS transistor ofthe multiplexer output circuit.

This disclosure outlines various embodiments so that those skilled inthe art may better understand the aspects of the present disclosure.Those skilled in the art should appreciate that they may readily use thepresent disclosure as a basis for designing or modifying other processesand structures for carrying out the same purposes and/or achieving thesame advantages of the embodiments introduced herein. Those skilled inthe art should also realize that such equivalent constructions do notdepart from the spirit and scope of the present disclosure, and thatthey may make various changes, substitutions, and alterations hereinwithout departing from the spirit and scope of the present disclosure.

What is claimed is:
 1. A multiplexer configured to receive first,second, third and fourth data signals and first, second, third andfourth select signals, and to output a selected one of the first,second, third and fourth data signals in response to the first, second,third and fourth select signals, the multiplexer comprising: first andsecond fins each extending in an X-axis direction; a first AOI22 circuitincluding a first plurality of poly gates extending in a Y-axisdirection perpendicular to the X-axis direction; a second AOI22 circuitincluding a second plurality of poly gates extending in the Y-axisdirection; an ND2 circuit including a third plurality of poly gatesextending in the Y-axis direction, the third plurality of poly gatesconfigured to receive first and second outputs from the first and secondAOI22 circuits, respectively; wherein the second plurality of poly gatesincludes a first segmented gate having first and second segmentsseparated from one another such that the first segment contacts thefirst fin and the second segment contacts the second fin, and whereinthe first segment of the first segmented gate is configured to receiveone of the first, second, third or fourth data signals, and the secondsegment of the first segmented gate is configured to receive one of thefirst, second, third or fourth select signals.
 2. The multiplexer ofclaim 1, further comprising: a VDD terminal connected to the first finat a location defining a source of a PMOS transistor of the ND2 circuitand a source of a PMOS transistor of the second AOI22 circuit; and a VSSterminal connected to the second fin at a location defining a source ofan NMOS transistor of the ND2 circuit and a source of an NMOS transistorof the second AOI22 circuit.
 3. The multiplexer of claim 1, wherein thefirst plurality of poly gates contacts the first and second fins andcomprises first, second, third and fourth gates configured to receivethe first and second data signals and the first and second selectsignals.
 4. The multiplexer of claim 3, wherein the second plurality ofpoly gates contacts the first and second fins and comprises fifth,sixth, seventh and eighth gates configured to receive the third andfourth data signals and the third and fourth select signals.
 5. Themultiplexer of claim 1, wherein the third plurality of poly gatescomprises ninth and tenth poly gates contacting the first and secondfins and configured to receive the first and second outputs,respectively.
 6. The multiplexer of claim 1, wherein the first segmentof the first segmented gate is configured to receive the fourth datasignal, and the second segment of the first segmented gate is configuredto receive the third select signal.
 7. The multiplexer of claim 6,wherein the second plurality of poly gates includes a second segmentedgate having first and second segments separated from one another suchthat the first segment contacts the first fin and the second segmentcontacts the second fin, and wherein the first segment of the secondsegmented gate is configured to receive the third data signal and thesecond segment of the second segmented gate is configured to receive thefourth data signal.
 8. The multiplexer of claim 7, wherein the firstplurality of poly gates includes a third segmented gate having first andsecond segments separated from one another such that the first segmentcontacts the first fin and the second segment contacts the second fin,and wherein the first segment of the third segmented gate is configuredto receive one of the first, second, third or fourth data signals, andthe second segment of third first segmented gate is configured toreceive one of the first, second, third or fourth select signals.
 9. Themultiplexer of claim 8, wherein the first segment of the third segmentedgate is configured to receive the second data signal, and the secondsegment of the third segmented gate is configured to receive the firstselect signal.
 10. The multiplexer of claim 1, further comprising thirdand fourth fins each extending in the X-axis direction.
 11. Themultiplexer of claim 1, further comprising an inactive structureextending in the Y-axis direction and contacting the first and secondfins, the inactive structure situated between the first plurality ofgates and the third plurality of gates.
 12. A multiplexer configured toreceive first, second, third and fourth data signals and first, second,third and fourth select signals, and to output a selected one of thefirst, second, third and fourth data signals in response to the first,second, third and fourth select signals, the multiplexer comprising:first and second fins each extending in an X-axis direction; a firstAOI22 circuit including a first plurality of gates extending in a Y-axisdirection perpendicular to the X-axis direction and contacting the firstand second fins; a second AOI22 circuit including a second plurality ofgates extending in the Y-axis direction and contacting the first andsecond fins; an ND2 circuit including a third plurality of gatesextending in the Y-axis direction, the third plurality of gatesconfigured to receive first and second outputs from the first and secondAOI22 circuits, respectively; and an inactive structure extending in theY-axis direction and contacting the first and second fins, the inactivestructure situated between the first plurality of gates and the thirdplurality of gates.
 13. The multiplexer of claim 12, wherein the firstplurality of gates comprises first, second, third and fourth gatesconfigured to receive the first and second data signals and the firstand second select signals.
 14. The multiplexer of claim 12, wherein thesecond plurality of gates comprises fifth, sixth, seventh and eighthgates configured to receive the third and fourth data signals and thethird and fourth select signals.
 15. The multiplexer of claim 12,wherein the second plurality of poly gates includes a first segmentedgate having first and second segments separated from one another suchthat the first segment contacts the first fin and the second segmentcontacts the second fin, and wherein the first segment of the firstsegmented gate is configured to receive one of the first, second, thirdor fourth data signals I3, and the second segment of the first segmentedgate is configured to receive one of the first, second, third or fourthselect signals S2.
 16. The multiplexer of claim 12, further comprising:a VDD terminal connected to the first fin at a location defining asource of a PMOS transistor of the ND2 circuit and a source of a PMOStransistor of the second AOI22 circuit; and a VSS terminal connected tothe second fin at a location defining a source of an NMOS transistor ofthe ND2 circuit and a source of an NMOS transistor of the second AOI22circuit.
 17. The multiplexer of claim 12, wherein the third plurality ofgates comprises ninth and tenth gates contacting the first and secondfins and configured to receive the first and second outputs,respectively.
 18. A method, comprising: providing an input logic circuitthat includes first and second fins each extending in an X-axisdirection and first, second, third, fourth, fifth, sixth, seventh andeighth gates extending in a Y-axis direction perpendicular to the X-axisdirection and contacting the first and second fins; providing an outputlogic circuit that includes a ninth gate extending in the Y-axisdirection and contacting the first and second fins; receiving first,second, third and fourth data signals, respectively, by the first,second, third and fourth gates; receiving first, second, third andfourth select signals, respectively, by the fifth, sixth, seventh andeighth gates; providing an output signal by the input logic circuitbased on the first, second, third and fourth data signals and the first,second, third and fourth select signals at an intermediate node;receiving the output signal at the intermediate node by the output logiccircuit; providing a selected one of the first, second, third and fourthdata signals by the output circuit at an output terminal.
 19. The methodof claim 18, wherein: receiving the first, second, third and fourth datasignals includes receiving the first, second, third and fourth datasignals by respective first, second, third and fourth PMOS transistorsof an eight-input AND-OR (AO2222) circuit connected to the first,second, third and fourth gates, and by respective first, second, thirdand fourth NMOS transistors of the AO2222 circuit connected to thefirst, second, third and fourth gates; and receiving the first, second,third and fourth select signals includes receiving the first, second,third and fourth select signals by respective fifth, sixth, seventh andeighth PMOS transistors of the AO2222 circuit having the fifth, sixth,seventh and eighth gates, and by fifth, sixth, seventh and eighth NMOStransistors of the AO2222 circuit connected to the fifth, sixth, seventhand eighth gates.
 20. The method of claim 18, wherein: receiving thefirst data signal includes receiving the first data signal by a firsttwo-input NAND (ND2) circuit including the first gate, receiving thesecond, third and fourth data signals includes receiving the receivingthe second, third and fourth data signals by a six-input AND-OR-INVERT(AOI222) circuit including the second, third, and fourth gates;receiving the first select signal includes receiving the first selectsignal by the ND2 circuit; receiving the second, third and fourth selectsignals includes receiving the receiving the second, third and fourthselect signals by the AOI222 circuit.